Type |
SLE5542 (100% functional compatibility to SLE 4442) |
SLE5528 (100% functional compatibility to SLE 4428) |
Datasheet |
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Features |
100% functional compatibility to SLE 4442 |
100% functional compatibility to SLE 4428 |
256 x 8 bit EEPROM organization of Data Memory |
1024 x 8 bit EEPROM organization of Data Memory |
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32 x 1 bit Protection Memory |
1024 x 1 bit Protection Memory |
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Data Memory (addresses 0#255) alterable only after verification of 3-Byte, Programmable Security Code (PSC) |
Data Memory alterable only after verification of 2 Byte PSC |
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Contact configuration and Answer-to-Reset (synchronous transmission) in accordance to ISO/IEC 7816. |
Contact configuration and Answer-to-Reset (synchronous transmission) in accordance to ISO/IEC 7816 |
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Electrical characteristics: 每-Ambient temperature 每40 # +80∼C for chip, 每25 # +80∼C for module 每-Supply voltage 5 V ㊣ 10 % 每-Supply current < 3 mA (typical 600 米A) 每-EEPROM erase / write time 5 ms 每-ESD protection typical 4,000 V 每-EEPROM Endurance minimum 100,000 erase / write cycles1) 每-Data retention for minimum of 10 years) |
Electrical characteristics: 每-Ambient temperature range -40 # +100∼C for chip, -25 # +80∼C for module 每-Supply voltage 5V ㊣ 10% 每-Supply current < 1 mA 每-EEPROM erase / write time 5 ms / 5 ms 每-ESD protection typically 4,000 V 每-EEPROM Endurance minimum 100,000 erase / write cycles 每-Data retention for minimum of 10 years |
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Applications |
l Loyalty and Stored Value |